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2SC5010 Datasheet(PDF) 1 Page - NEC |
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2SC5010 Datasheet(HTML) 1 Page - NEC |
1 / 10 page © 1993 DATA SHEET SILICON TRANSISTOR Document No. P10389EJ2V0DS00 (2nd edition) (Previous No. TD-2401) Date Published July 1995 P Printed in Japan 2SC5010 DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • Low Voltage Use. • High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) • Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) • High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) • Ultra Super Mini Mold Package. ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC5010 50 pcs/Unit. 2SC5010-T1 3 kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 125 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape. PACKAGE DIMENSIONS in milimeters 1.6 ± 0.1 0.8 ± 0.1 2 1 3 1. Emitter 2. Base 3. Collector |
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