PZT5551L3 datasheet(1/5 Pages) CYSTEKEC

Part #	PZT5551L3

Description	General Purpose NPN Epitaxial Planar Transistor

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C208L3

Issued Date : 2004.09.21

Revised Date : 2008.07.04

Page No. : 1/5

PZT5551L3

CYStek Product Specification

General Purpose NPN Epitaxial Planar Transistor

PZT5551L3

Description

The

PZT5551L3 is designed for general purpose applications requiring high breakdown voltage.

Features

• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)

• Complement to

BTA1514L3

• Pb-free package

Symbol

Outline

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Power Dissipation@TC=25℃

Pd

5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

PZT5551L3

SOT-223

B C E

B：Base

C：Collector

E：Emitter

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PZT5551L3 Datasheet(PDF) 1 Page - Cystech Electonics Corp.

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