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2SC4956 Datasheet(PDF) 2 Page - NEC

Part No. 2SC4956
Description  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC4956 Datasheet(HTML) 2 Page - NEC

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2SC4956
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
0.1
µAVCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µAVEB = 1 V, IC = 0
DC Current Gain
hFE
75
150
VCE = 3 V, IC = 5 mA*1
Gain Bandwidth Product
fT
12
GHz
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
Feed back Capacitance
Cre
0.2
0.4
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
911
dB
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
Noise Figure
NF
2.5
4.0
dB
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
*1
Pulse Measurement; PW
≤ 350
µs, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
T82
Marking
T82
hFE
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
VBE – Base to Emitter Voltage – V
50
200
100
0
50
100
150
60 mW
40
30
20
10
0
0.5
1
VCE = 3 V
Free Air


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