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MTBB5N10L3 Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTBB5N10L3 Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 8 page CYStech Electronics Corp. Spec. No. : C593L3 Issued Date : 2010.07.07 Revised Date : 2011.12.09 Page No. : 3/8 MTBB5N10L3 Preliminary CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 12 14 16 18 20 024 6 8 10 Brekdown Voltage vs Junction Temperature 100 110 120 130 140 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) 10V 9V 8V 7V 6V 5V 4.5V 4V VGS=3.5V VGS=3V V =2.5V GS Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.001 0.01 0.1 1 10 ID, Drain Current(A) VGS=3V VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 IDR, Reverse Drain Current(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 02 46 8 10 0 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 80 100 120 140 160 180 200 220 240 260 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS=4.5V, ID=1A VGS=10V, ID=2A VGS, Gate-Source Voltage(V) ID=2A ID=1A |
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