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2SC4226 Datasheet(PDF) 2 Page - NEC

Part No. 2SC4226
Description  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC4226 Datasheet(HTML) 2 Page - NEC

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2SC4226
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
1.0
µAVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
µAVEB = 1 V, IC = 0
DC Current Gain
hFE
40
110
250
VCE = 3 V, IC = 7 mA*1
Gain Bandwidth Product
fT
3.0
4.5
GHz
VCE = 3 V, IC = 7 mA
Feed back Capacitance
Cre
0.7
1.5
pF
VCE = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
79
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1
Pulse Measurement ; PW
≤ 350
µs, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
R23
R24
R25
Marking
R23
R24
R25
hFE
40 to 80
70 to 140
125 to 250


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