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2SC4225 Datasheet(PDF) 1 Page - NEC

Part No. 2SC4225
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC4225 Datasheet(HTML) 1 Page - NEC

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©
1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
Low Noise and High Gain
NF = 1.5 dB TYP.
at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCB0
25
V
Collector to Emitter Voltage
VCE0
12
V
Emitter to Base Voltage
VEB0
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
PT
160
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
ICB0
1.0
µAVCB = 10 V, IE = 0
Emitter Cutoff Current
IEB0
1.0
µAVEB = 2 V, IC = 0
DC Current Gain
hFE
40
80
200
VCE = 3 V, IC = 20 mA, pulsed
Gain Bandwidth Product
fT
4
GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
Output Capacitance
Cob
1.2
1.8
pF
VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain
S21e 2
7.5
9.0
dB
VCE = 3 V, IC = 20 mA, f = 1 GHz
Noise Figure
NF
1.5
3.0
dB
VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank
R2
R3
Marking
R2
R3
hFE
40 to 120
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector


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