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MTB09P03J3 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTB09P03J3
Description  P-Channel Logic Level Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB09P03J3 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C808J3
Issued Date : 2010.01.18
Revised Date : 2013.12.26
Page No. : 4/9
MTB09P03J3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
20
40
60
80
100
120
140
160
180
200
02
4
6
8
10
Brekdown Voltage vs Ambient Temperature
30
32
34
36
38
40
-100
-50
0
50
100
150
200
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
-VDS, Drain-Source Voltage(V)
10V
9V
8V
7V
6V
-VGS=5V
-VGS=4V
-VGS=3V
-V =2V
GS
Static Drain-Source On-State resistance vs Drain Current
1
10
100
1000
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
VGS=-2.5V
VGS=-3V
VGS=-4.5V
VGS=-10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
-IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
40
80
120
160
200
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0
5
10
15
20
-60
-20
20
60
100
140
180
Tj, Junction Temperature(°C)
VGS=-4.5V, ID=-10A
VGS=-10V, ID=-25A
-VGS, Gate-Source Voltage(V)
ID=-25A


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