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MTB09N03V8 Datasheet(PDF) 6 Page - Cystech Electonics Corp. |
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MTB09N03V8 Datasheet(HTML) 6 Page - Cystech Electonics Corp. |
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6 / 9 page  CYStech Electronics Corp. Spec. No. : C709V8 Issued Date : 2012.08.20 Revised Date : 2012.08.23 Page No. : 6/9 MTB09N03V8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 20 40 60 80 100 120 02 46 8 10 12 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Maximum Power Dissipation 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) TJ(MAX)=150°C TA=25°C θJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50 °C/W |
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