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MTB03N03H8 Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTB03N03H8 Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
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3 / 7 page  CYStech Electronics Corp. Spec. No. : C788H8 Issued Date : 2010.09.23 Revised Date : 2010.10.06 Page No. : 3/7 MTB03N03H8 CYStek Product Specification Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg (VGS=10V) *1, 2 - 48 - Qg (VGS=4.5V) *1, 2 - 27 - Qgs *1, 2 - 6 - Qgd *1, 2 - 16 - nC VDS=15V, VGS=10V, ID=30A td(ON) *1, 2 - 20 - tr *1, 2 - 15 - td(OFF) *1, 2 - 65 - tf *1, 2 - 10 - ns VDS=15V, ID=24A, VGS=10V, RGS=2.7Ω Rg - 1.2 - Ω VGS=15mV, VDS=0V, f=1MHz Source-Drain Diode IS *1 - - 75 ISM *3 - - 150 A VSD *1 - - 1.3 V IF=IS, VGS=0V trr - 32 - ns Qrr - 12 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. |
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