IXSK40N60BD1 datasheet(2/2 Pages) IXYS

Part #	IXSK40N60BD1

Description	IGBT with Diode PLUS247TM package Short Circuit SOA Capability

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Manufacturer	IXYS [IXYS Corporation]

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IXSK 40N60BD1

IXSX 40N60BD1

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

I

C

= I

C90; VCE = 10 V,

16

23

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

iss

3700

pF

C

oss

V

GS = 0 V, VDS = 25 V, f = 1 MHz

440

pF

C

rss

60

pF

Q

g

190

nC

Q

ge

I

C = IC90, VGE = 15 V, VCE = 0.5 VCES

45

nC

Q

gc

88

nC

t

d(on)

50

ns

t

ri

50

ns

t

d(off)

110

200

ns

t

fi

120

200

ns

E

off

1.8

2.6

mJ

t

d(on)

50

ns

t

ri

50

ns

E

on

2.2

mJ

t

d(off)

190

ns

t

fi

180

ns

E

off

2.6

mJ

R

thJC

0.48 K/W

R

thCK

0.15

K/W

Reverse Diode (FRED)

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F = IC90, VGE = 0 V,

1.8

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

I

RM

I

F = IC90, VGE = 0 V, -diF/dt = 100 A/ms

2

2.5

A

t

rr

V

R = 100 V

I

F = 1 A; -di/dt = 200 A/ms; VR = 30 V

35

ns

R

thJC

0.75 K/W

Inductive load, T

J = 25°C

I

C = IC90, VGE = 15 V, L = 100 mH,

V

CE = 0.8 VCES, RG = 2.7 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

Inductive load, T

J = 125°C

I

C = IC90, VGE = 15 V, L = 100 mH

V

CE = 0.8 VCES, RG = 2.7 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

TO-264 AA Outline

PLUS247TM (IXSX)

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

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