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2SC1913 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC1913 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page  SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1913 2SC1913A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1913 150 V(BR)CEO Collector-emitter breakdown voltage 2SC1913A IC=0.1mA ,IB=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10µA ,IC=0 5 V 2SC1913 1.0 VCEsat Collector-emitter saturation voltage 2SC1913A IC=0.3A; IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=0.3A; IB=30mA 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE-1 DC current gain IC=150mA ; VCE=10V 65 330 hFE-2 DC current gain IC=500mA ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=100V;f=1MHz 15 pF fT Transition frequency IC=50mA ; VCE=10V 120 MHz hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 |
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