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IRF7342QPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7342QPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7342QPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.095 0.105 VGS = -10V, ID = -3.4A ––– 0.150 0.170 VGS = -4.5V, ID = -2.7A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A ––– ––– -2.0 VDS = -55V, VGS = 0V ––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 26 38 ID = -3.1A Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 10 td(on) Turn-On Delay Time ––– 14 22 VDD = -28V tr Rise Time ––– 10 15 ID = -1.0A td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0 Ω tf Fall Time ––– 22 32 RD = 16 Ω, Ciss Input Capacitance ––– 690 ––– VGS = 0V Coss Output Capacitance ––– 210 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) StaticDrain-to-SourceOn-Resistance IDSS Drain-to-SourceLeakageCurrent nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C, IF = -2.0A Qrr Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics -27 -2.0 A S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A. (See Figure 8) Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec |
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