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CTA2N1P Datasheet(PDF) 2 Page - Diodes Incorporated |
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CTA2N1P Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page  DS30295 Rev. A-2 2 of 3 CTA2N1P Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @ TA = 25 °C unless otherwise specified Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @ TA = 25 °C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V IC = 100 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100 mA, IC = 0 Collector Cutoff Current ICEX ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V Base Cutoff Current IBL ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 20 40 80 100 40 ¾ ¾ ¾ 300 ¾ ¾ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.75 ¾ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Ccb ¾ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 k W VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 ¾ Output Admittance hoe 1.0 30 mS Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ¾ 15 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Fall Time tf ¾ 30 ns Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS -50 ¾¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25 °C VDS = -50V, VGS = 0V, TJ = 125 °C VDS = -25V, VGS = 0V, TJ = 25 °C Gate-Body Leakage IGSS ¾¾ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) -0.8 ¾ -2.0 V VDS =VGS, ID = -1mA Static Drain-Source On-Resistance RDS (ON) ¾¾ 10 W VGS = -5V, ID = 0.100A Forward Transconductance gFS .05 ¾¾ S VDS = -25V, ID = 0.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ¾¾ 45 pF VDS = -25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ¾¾ 25 pF Reverse Transfer Capacitance Crss ¾¾ 12 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ¾ 10 ¾ ns VDD = -30V, ID = -0.27A, RGEN = 50 W,VGS = -10V Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. |
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