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AON6706 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6706
Description  30V N-Channel MOSFET
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6706 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6706
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 4.6m
Ω
RDS(ON) (at VGS = 4.5V)
< 7m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
215
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
2.3
33
TC=100°C
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
14
40
17
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
SRFET
TM AON6706 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
14
Continuous Drain
Current
92
18
A
43
A
TA=25°C
IDSM
A
TA=70°C
ID
85
64
TC=25°C
TC=100°C
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
83
1.4
TA=25°C
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1
55
1.5
SRFET TM
G
D
S
SRFET
TM
Soft Recovery MOSFET:
Integrated Schottky Diode
PIN1
DFN5X6
Top View
Bottom View
Top View
1
2
3
4
8
7
6
5
Rev 2: November 2010
www.aosmd.com
Page 1 of 7


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