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IXDD509SIA Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXDD509SIA
Description  9 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDD509SIA Datasheet(HTML) 4 Page - IXYS Corporation

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Copyright © 2007 IXYS CORPORATION All rights reserved
IXDD509 / IXDE509
* The following notes are meant to define the conditions for the θ
J-A, θJ-C and θJ-S values:
1) The
θ
J-A (typ) is defined as junction to ambient. The θJ-A of the standard single die 8-Lead PDIP and 8-Lead SOIC are dominated by the
resistance of the package, and the IXD_5XX are typical. The values for these packages are natural convection values with vertical boards
and the values would be lower with forced convection. For the 6-Lead DFN package, the
θ
J-A value supposes the DFN package is
soldered on a PCB. The
θ
J-A (typ) is 200 °C/W with no special provisions on the PCB, but because the center pad provides a low
thermal resistance to the die, it is easy to reduce the
θ
J-A by adding connected copper pads or traces on the PCB.
These can reduce
the
θ
J-A (typ) to 125 °C/W easily, and potentially even lower. The θJ-A for DFN on PCB without heatsink or thermal management will
vary significantly with size, construction, layout, materials, etc. This typical range tells the user what he is likely to get if he does no
thermal management.
2)
θ
J-C (max) is defined as juction to case, where case is the large pad on the back of the DFN package. The θJ-C values are generally not
published for the PDIP and SOIC packages. The
θ
J-C for the DFN packages are important to show the low thermal resistance from junction to
the die attach pad on the back of the DFN, -- and a guardband has been added to be safe.
3) The
θ
J-S (typ) is defined as junction to heatsink, where the DFN package is soldered to a thermal substrate that is mounted on a heatsink.
The value must be typical because there are a variety of thermal substrates. This value was calculated based on easily available IMS in the
U.S. or Europe, and not a premium Japanese IMS. A 4 mil dialectric with a thermal conductivity of 2.2W/mC was assumed. The result was
given as typical, and indicates what a user would expect on a typical IMS substrate, and shows the potential low thermal resistance for the
DFNpackage.
Unless otherwise noted, 4.5V
≤ V
CC ≤ 30V , Tj < 150
oC
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics @ temperatures over -55 oC to 125 oC (3)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIH
High input voltage
4.5V
≤ V
CC ≤ 18V
2.4
V
VIL
Low input voltage
4.5V
≤ V
CC ≤ 18V
0.8
V
VIN
Input voltage range
-5
VCC + 0.3
V
IIN
Input current
0V
≤ V
IN ≤ VCC
-10
10
µA
VOH
High output voltage
VCC - 0.025
V
VOL
Low output voltage
0.025
V
ROH
High state output
resistance
VCC = 18V
2
ROL
Low state output
resistance
VCC = 18V
1.5
IDC
Continuous output
current
1
A
tR
Rise time
CLOAD =10,000pF VCC =18V
60
ns
tF
Fall time
CLOAD =10,000pF VCC =18V
60
ns
tONDLY
On-time propagation
delay
CLOAD =10,000pF VCC =18V
55
ns
tOFFDLY
Off-time propagation
delay
CLOAD =10,000pF VCC =18V
40
ns
tENOH
Enable to output high
delay time
VCC = 18V
60
ns
tDOLD
Disable to output high
impedance delay time
VCC = 18V
100
ns
VCC
Power supply voltage
4.5
18
30
V
ICC
Power supply current
VCC = 18V, VIN = 0V
VIN = 3.5V
VIN = VCC
0.13
3
0.13
µA
mA
mA
Notes:
1. Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The device is not intended to be operated outside of the Operating Ratings.
3. Electrical Characteristics provided are associated with the stated Test Conditions.
4. Typical values are presented in order to communicate how the device is expected to perform, but not necessarily
to highlight any specific performance limits within which the device is guaranteed to function.
(4)


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