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IRFR3303TRLPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR3303TRLPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page IRFR3303PbF IRFU3303PbF HEXFET® Power MOSFET 12/14/04 Parameter Typ. Max. Units RθJC Junction-to-Case 2.2 RθJA Junction-to-Ambient (PCB mount)** 50 °C/W RθJA Junction-to-Ambient 110 Thermal Resistance l Ultra Low On-Resistance l Surface Mount (IRFR3303) l Straight Lead (IRFU3033) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21
A IDM Pulsed Drain Current 120 PD @TC = 25°C Power Dissipation 57 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 95 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 5.7 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 95070A l Lead-Free VDSS = 30V RDS(on) = 0.031Ω S D G D-Pak TO-252AA I-Pak TO-251AA www.irf.com 1 |
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