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IRF7946TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7946TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF7946PbF 2 www.irf.com Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. T C measured with thermocouple mounted to top (Drain) of part. Surface mounted on 1 in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (tested) Single Pulse Avalanche Energy Tested Value l IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJA Junction-to-Ambient n ––– 55 RJA Junction-to-Ambient p 12.5 ––– RJA Junction-to-Ambient o 20 ––– °C/W RJC Junction-to-Case qk ––– 1.3 RJA-PCB Junction-to-PCB Mounted 1.0 ––– 96 Max. 198 125 793 90 163 -55 to + 150 A °C 85 See Fig. 14, 15, 22a, 22b ± 20 0.77 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.1 1.4 m 1.7 ––– m VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.67 ––– VGS = 20V VGS = -20V VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 6.0V, ID = 72A g Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mAd VGS = 10V, ID = 90A g VDS = VGS, ID = 150μA |
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