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2SC3809 Datasheet(PDF) 2 Page - NEC

Part No. 2SC3809
Description  NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC3809 Datasheet(HTML) 2 Page - NEC

  2SC3809 Datasheet HTML 1Page - NEC 2SC3809 Datasheet HTML 2Page - NEC 2SC3809 Datasheet HTML 3Page - NEC 2SC3809 Datasheet HTML 4Page - NEC  
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2SC3809
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use alcohol as a solvent.
Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (TA = 25
°°°°°C)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
f = 1.0 MHz
2
1
0.5
0.3
0
0
VCE = 10 V
0.5 1.0
5.0 10
30
0.5
1
2
5
10
20
30
0.5
1
5
10
50
200
100
50
10
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
VCB - Collector to Base Voltage - V
IC - Collector Current - mA
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
VCE = 10 V


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