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2SC3663 Datasheet(PDF) 1 Page - NEC

Part No. 2SC3663
Description  NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC3663 Datasheet(HTML) 1 Page - NEC

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DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
1997
©
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
DATA SHEET
FEATURES
Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP.
@VCE = 1 V, IC = 250
PA, f = 1.0 GHz
GA = 3.5 dB TYP.
@VCE = 1 V, IC = 250
PA, f = 1.0 GHz
Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
Gold electrode gives high reliability.
Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (TA = 25
qqqqC)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
8V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
5mA
Total Power Dissipation
PT
50
mW
Junction Temperature
Tj
150
qC
Storage Temperature
Tstg
ð65 to +150
qC
ELECTRICAL CHARACTERISTICS (TA = 25
qqqqC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
PA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
PA
DC Current Gain
hFE
VCE = 1 V, IC = 250
PA, pulse
50
100
250
Gain Bandwidth Product
fT
VCE = 1 V, IC = 1 mA
4
GHz
Insertion Power Gain
°S21e°2
VCE = 1 V, IC = 1 mA, f = 1 GHz
4.0
6.5
dB
Maximum Available Gain
MAG
VCE = 1 V, IC = 1 mA, f = 1 GHz
12.5
dB
Noise Figure
NF
VCE = 1 V, IC = 250
PA, f = 1.0 GHz
3.0
4.5
dB
Associated Power Gain
GA
VCE = 1 V, IC = 250
PA, f = 1.0 GHz
3.5
dB
Collector Capacitance
Cob
Note
VCB = 1 V, IE = 0, f = 1.0 MHz
0.4
0.6
pF
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
PACKAGE DIMENSIONS (in mm)
2.8 ± 0.2
1.5
C
Marking
E
B
0.65
+0.1
–0.15
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62


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