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OPB702 Datasheet(PDF) 2 Page - OPTEK Technologies

Part # OPB702
Description  Reflective Object Sensor
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Manufacturer  OPTEK [OPTEK Technologies]
Direct Link  http://www.optekinc.com
Logo OPTEK - OPTEK Technologies

OPB702 Datasheet(HTML) 2 Page - OPTEK Technologies

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OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1
12/06
Page 2 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Reflective Object Sensor
OPB702, OPB702D, OPB702R, OPB702RR
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage & Operating Temperature Range
-40° C to +85° C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(2)
260° C
Input Diode
Peak Forward Current
50 mA
Reverse Voltage
2 V
Power Dissipation]
(1)
100 mW
Output Photosensor
Collector-Emitter Voltage
OPB702, OPB702R
OPB702D, OPB702RR
30 V
15 V
Emitter-Collector Voltage
5 V
Power Dissipation]
(1)
100 mW
Notes:
(1)
Derate linearly 1.67 mW/°C above 25 ° C.
(2)
RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(3)
d is the distance from the assembly face to the reflective surface.
(4)
Measured using Eastman Kodak gray card. The white side of the card is used as a 90% diffuse reflectance surface. Reference:
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode (see OP265 or OP165 for Infrared LED & OVLAS6CB8 for Red LED for additional information)
VF
Forward Voltage
(Infrared LED)
Red (VLED)
-
-
1.7
2.4
V
IF = 20 mA
IF = 40 mA
IR
Reverse Current
-
-
100
µA
VR = 2 V
Output Phototransistor (see OP505 for Phototransistor, OP705 for Rbe-Phototransistor, OP535 for Photodarlington)
V(BR)CEO
Collector-Emitter Breakdown Voltage
OPB702
OPB702D
OPB702R, OPB702RR
30
15
30
-
-
-
-
-
-
V
IC = 100 µA, IF = 0, Ee = 0
IC = 1 mA, IF = 0, Ee = 0
IC = 1 mA, IF = 0, Ee = 0
V(BR)ECO
Emitter-Collector Breakdown Voltage
OPB702
OPB702D
5
5
-
-
-
-
V
V
IE = 100 µA, IF = 0, EE = 0
IE = 100 µA, IF = 0, EE = 0
ICEO
Collector Dark Current
OPB702
OPB702D
OPB702R, OPB702RR
-
-
-
-
-
-
100
250
100
nA
nA
nA
VCE = 10 V, IF = 0, EE = 0
VCE = 10 V, IF = 0, EE = 0
VCE = 10 V, IF = 0, EE = 0
Combined
VCE(SAT)
(3)
(4)
Collector-Emitter Saturation Voltage
OPB702
OPB702D
OPB702R, OPB702RR
-
-
-
-
-
-
0.4
1.1
0.4
V
V
V
IF = 40 mA, IC = 250 µA, d = .15” (3.81 mm)
IF = 40 mA, IC = 400 µA, d = .15” (3.81 mm)
IF = 40 mA, IC = 250 µA, d = .15” (3.81 mm)
IC(ON)
(3)(4)
On-State Collector Current
OPB702
OPB702D
OPB702R
OPB702RR
0.1
3.2
0.4
0.2
-
-
-
-
1.0
65.0
6.0
3.5
mA
IF = 40 mA, VCE = 5 V, d = .15” (3.81 mm)
IECO
Emitter-Reverse Current
OPB702R, OPB702RR
-
-
100
µA
VCE = 0.4 V, IF = 0, EE = 0


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