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ZVN2106A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # ZVN2106A
Description  N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

ZVN2106A Datasheet(HTML) 2 Page - Fairchild Semiconductor

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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
60 Volt V
DS
*R
DS(on)=2Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb=25°C
ID
450
mA
Pulsed Drain Current
IDM
8A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
700
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.4
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
500
100
nA
µA
VDS=60 V, VGS=0
VDS=48 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
2A
VDS=18V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
2
VGS=10V,ID=1A
Forward Transconductance
(1)(2)
gfs
300
mS
VDS=18V,ID=1A
Input Capacitance (2)
Ciss
75
pF
Common Source Output
Capacitance (2)
Coss
45
pF
VDS=18 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2)
Crss
20
pF
E-Line
TO92 Compatible
ZVN2106A
3-361
D
G
S
TYPICAL CHARACTERISTICS
VDS - Drain Source Voltage (Volts)
01
2
3
4
5
Saturation Characteristics
5V
VGS=
10V
7V
8V
6V
4V
3V
0
0
2
4
6810
1.6
1.2
1.4
1.8
2.0
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
ID=
1A
0.5A
0.25A
9V
On-resistance v gate-source voltage
VGS-Gate Source Voltage (Volts)
12
3
4
5 6 7 8 9 10
20
ID=
1A
0.5A
0.25A
0.1
1
10
Normalised RDS(on) and VGS(th) vs Temperature
-40 -20
0 20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
es
ista
nc
e R
DS(
on
)
Gate Threshold Vo
ltage VGS
(th)
Tj-Junction Temperature (C°)
0.4
-80 -60
0
4
3
1
2
0.6
0.2
0.4
0.8
1.0
Transfer Characteristics
VGS-Gate Source Voltage (Volts)
0
1
234
5
6
7
8
9
10
VDS=
10V
2
0
4
3
1
ID=1A
VGS=10V
ID=1mA
VGS=VDS
Transconductance v drain current
ID- Drain Current (Amps)
01
2
3
4
5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
VDS=10V
ZVN2106A
3-362


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