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MOS FIELD EFFECT TRANSISTOR

NP50P04SDG

SWITCHING

P-CHANNEL POWER MOSFET

DATA SHEET

Document No. D19072EJ2V0DS00 (2nd edition)

Date Published March 2008 NS

Printed in Japan

2007

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DESCRIPTION

The NP50P04SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP50P04SDG-E1-AY

Note

NP50P04SDG-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

Note Pb-free (This product does not contain Pb in external electrode.)

FEATURES

• Super low on-state resistance

• Low input capacitance

°C)

−40

V

m20

V

°C)

m50

A

Drain Current (pulse)

Note1

m150

A

°C)

84

W

°C)

1.2

W

Channel Temperature

175

°C

Storage Temperature

−55 to +175

°C

Single Avalanche Current

Note2

37

A

Single Avalanche Energy

Note2

136

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

THERMAL RESISTANCE

Channel to Case Thermal Resistance

1.78

°C/W

Channel to Ambient Thermal Resistance

125

°C/W

(TO-252)

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