NP50P04SDG-E1 datasheet(7/9 Pages) RENESAS

Part #	NP50P04SDG-E1

Description	Old Company Name in Catalogs and Other Documents

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet D19072EJ2V0DS

5

NP50P04SDG

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

0

10

20

30

-75

-25

25

75

125

175

225

ID =

−25 A

Pulsed

−10 V

VGS =

−4.5 V

Tch - Channel Temperature -

°C

10

100

1000

10000

-0.1

-1

-10

-100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1

10

100

1000

-0.1

-1

-10

-100

tr

td(off)

td(on)

tf

VDD =

−20 V

VGS =

−10 V

RG = 0

Ω

ID - Drain Current - A

0

-10

-20

-30

-40

0

20

40

60

80

100

120

0

-3

-6

-9

-12

VDS

ID =

−50 A

VGS

VDD =

−32 V

−20 V

−8 V

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-0.01

-0.1

-1

-10

-100

-1000

0

0.5

1

1.5

VGS =

−10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

1

10

100

1000

-0.1

-1

-10

-100

di/dt =

−100 A/μs

VGS = 0 V

IF - Diode Forward Current - A

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