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2SC3587 Datasheet(PDF) 1 Page - NEC

Part No. 2SC3587
Description  NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SC3587 Datasheet(HTML) 1 Page - NEC

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©
1996
DATA SHEET
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
• Low noise
: NF = 1.7 dB TYP.
@ f = 2 GHz
NF = 2.6 dB TYP.
@ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
GA = 8.0 dB TYP.
@ f = 4 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°°C)
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°°C)
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
E
CB
E
45
°
0.5
± 0.05
2.55
± 0.2
2.1
φ
3.8 MIN.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT (TC = 25 °C)
580
mW
Junction Temperature
Tj
200
°C
Storage Temperature
Tstg
-65 to +150
°C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 10 V
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1 V
1.0
µA
DC Current Gain
hFE
VCE = 6 V, IC = 10 mA Pulse
50
100
250
Gain Bandwidth Product
fT
VCE = 6 V, IC = 10 mA
10.0
GHz
Reverse Transfer Capacitance
Cre
VCB = 10 V, f = 1 MHz
0.2
0.7
pF
Noise Figure
NF
Note
VCE = 6 V, IC = 5 mA
f = 2 GHz
1.7
2.4
dB
f = 4 GHz
2.6
dB
Insertion Gain
|S21e|2
VCE = 6 V, IC = 10 mA
f = 2 GHz
10.5
12.5
dB
f = 4 GHz
7.5
dB
Maximum Available Gain
MAG
VCE = 6 V, IC = 10 mA, f = 4 GHz
10
dB
Power Gain
GA
VCE = 6 V, IC = 5 mA
f = 2 GHz
12.5
dB
f = 4 GHz
8.0
dB


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