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NSCT3906LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NSCT3906LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 0 1 Publication Order Number: NSCT3906LT1/D NSCT3906LT1G General Purpose Transistors PNP Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) @ TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) @ TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com Device Package Shipping† ORDERING INFORMATION NSCT3906LT1G SOT−23 (Pb−Free) 3,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NSCT3906LT3G SOT−23 (Pb−Free) 10,000 Tape & Reel COLLECTOR 3 1 BASE 2 EMITTER SOT−23 CASE 318 STYLE 6 1 2 3 *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 396 M G G 396 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM |
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