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NRVB130T3G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NRVB130T3G
Description  Surface Mount Schottky Power Rectifier
Download  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NRVB130T3G Datasheet(HTML) 2 Page - ON Semiconductor

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MBR130, NRVB130
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(Rated VR) TL = 65°C
IF(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
5.5
A
Storage Temperature Range
Tstg
−65 to +125
°C
Operating Junction Temperature
TJ
−65 to +125
°C
Voltage Rate of Change (Rated VR)
dv/dt
1000
V/
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
230
°C/W
Thermal Resistance, Junction to Lead (Note 1)
RθJL
108
°C/W
1. FR−4 or FR−5 = 3.5
× 1.5 inches using a 1 inch Cu pad.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A, TJ = 25°C)
(IF = 0.7 A, TJ = 25°C)
(IF = 1.0 A, TJ = 25°C)
VF
0.47
0.35
0.45
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(VR = 5 V, TC = 25°C)
IR
60
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2%.


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