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BCX52-10-115 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BCX52-10-115
Description  PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCX52-10-115 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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BCP52_BCX52_BC52PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 18 October 2011
4 of 22
NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
-
5V
IC
collector current
-
1A
ICM
peak collector current
single pulse;
tp  1ms
-
2A
IB
base current
-
0.3
A
IBM
peak base current
single pulse;
tp  1ms
-
0.3
A
Ptot
total power dissipation
Tamb  25 C
BCP52
[1] -0.65
W
[2] -1.00
W
[3] -1.35
W
BCX52
[1] -0.50
W
[2] -0.95
W
[3] -1.35
W
BC52PA
[1] -0.42
W
[2] -0.83
W
[3] -1.10
W
[4] -0.81
W
[5] -1.65
W
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C


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