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BC850C-215 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BC850C-215
Description  NPN general purpose transistors
Download  8 Pages
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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BC850C-215 Datasheet(HTML) 4 Page - NXP Semiconductors

   
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2004 Jan 16
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849; BC850
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1.
VBEsat decreases by about 1.7 mV/K with increasing temperature.
2.
VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
5
μA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
100
nA
hFE
DC current gain
IC = 10 μA; VCE = 5 V;
see Figs 2 and 3
BC849B; BC850B
240
BC849C; BC850C
450
DC current gain
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
BC849B; BC850B
200
290
450
BC849C; BC850C
420
520
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB = 5 mA
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
700
mV
IC = 100 mA; IB = 5 mA; note 1
900
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
580
660
700
mV
IC = 10 mA; VCE = 5 V; note 2
770
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
F
noise figure
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
4
dB
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
4
dB


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