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2SC2954 Datasheet(PDF) 1 Page - NEC

Part No. 2SC2954
Description  NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SC2954 Datasheet(HTML) 1 Page - NEC

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DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
1994
©
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S21e: 20 dB, 12.5 dB
• Large PT in Small Package.
PT: 2 W with 16 cm
2
 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
35
V
Collector to Emitter Voltage
VCEO
18
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
150
mA
Total Power Dissipation
PT*
2.0
W
Termal Resistance
Rth(j-a)*
62.5
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
* With 16 cm
2
 0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
1.5±0.1
0.42
±0.06


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