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2SC2351 Datasheet(PDF) 1 Page - NEC

Part No. 2SC2351
Description  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SC2351 Datasheet(HTML) 1 Page - NEC

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SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984
©
FEATURES
• NF
1.5 dB
TYP.
@ f = 1.0 GHz
• MAG
14 dB
TYP.
@ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
PT
250
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
µA
VCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µA
VEB = 2.0 V, IC = 0
DC Current Gain
hFE
40
200
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
4.5
GHz
VCE = 10 V, IC = 20 mA
Output Capacitance
Cob
0.75
1.0
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
9
11
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
E/P *
F/Q *
Marking
R2
R3
hFE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
0.65
+0.1
−0.15


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