RHK003N06

Transistors

1/2

4V Drive Nch MOS FET

RHK003N06

Structure

External dimensions (Unit : mm)

Silicon N-channel MOS FET

Features

1) Low On-resistance.

2) 4V drive.

Applications

Each lead has same dimensions

SMT3

(2)

(1)

0.4

(3)

2.9

1.9

0.95

0.95

0.8

0.15

1.1

(1)Source

(2)Gate

(3)Drain

Abbreviated symbol : RKS

Switching

Inner circuit

(1)

(3)

(2)

∗2

∗1

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Package

Code

Taping

Basic ordering unit (pieces)

RHK003N06

T146

3000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗2

∗1

Parameter

V

Symbol

V

mA

A

mA

mA

mW

°C

Tch

°C

Tstg

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

Source current

(Body diode)

60

150

−55 to +150

±20

±300

±1.2

200

800

200

Thermal resistance

Parameter

°C/W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

625

∗ Each terminal mounted on a recommended land

∗