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2SC1927 Datasheet(PDF) 1 Page - NEC

Part No. 2SC1927
Description  NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC1927 Datasheet(HTML) 1 Page - NEC

   
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©
1996
DATA SHEET
SILICON TRANSISTOR
2SC1927
DESCRIPTION
The 2SC1927 is an NPN silicon epitaxial dual transistor that
consists of two chips equivalent to the 2SC1275, and is designed for
differential amplifier and ultra-high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
14
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Collector Dissipation
PC
200
mW/unit
Total Power Dissipation
PT
300
mW
Junction Temperature
Tj
200
˚C
Storage Temperature
Tstg
–65 to +200
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICES
VCE = 15 V, RBE = 0
50
nA
Emitter Cut-off Current
IEBO
VEB = 2.0 V, IC = 0
50
nA
DC Current Gain
hFE
VCE = 10 V, IC = 10 mA
25
80
200
hFE Ratio
hFE1/hFE2
VCE = 10 V, IC = 10 mA *1
0.8
1.0
Difference of Base to Emitter Voltage
∆VBE
VCE = 10 V, IC = 10 mA
30
mV
Gain Bandwidth Product
fT
VCE = 10 V, IC = 10 mA *2
1.5
2.0
GHz
Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz *3
1.1
1.5
pF
*1. hFE1 is the smaller hFE value of the 2 transistors.
2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the
2SC1275).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should
be connected to the guard terminal of the bridge.
Document No. P11671EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
NPN SILICON EPITAXIAL DUAL TRANSISTOR
FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
5.0 MIN.
3.5
+0.3
–0.2
5.0 MIN.
3
2
1
4
5
6
3
2C
4
1C
6
1B
1
2B
5
1E
2
2E
PIN CONNECTIONS


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