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2SC1623 Datasheet(PDF) 1 Page - NEC

Part No. 2SC1623
Description  AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC1623 Datasheet(HTML) 1 Page - NEC

   
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SILICON TRANSISTOR
2SC1623
FEATURES
High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature PT
200
mW
Maximum Temperatures
Junction Temperature
Tj
150
˚C
Storage Temperature Range
Tstg
–55 to +150
˚C
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DIMENSIONS
in millimeters
©
1984
DATA SHEET
1.5
2.8 ± 0.2
0.65
+0.1
–0.15
2
1
3
Marking
1: Emitter
2: Base
3: Collector
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
µA
VCB = 60 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µA
VEB = 5.0 V, IC = 0
DC Current Gain
hFE
90
200
600
VCE = 6.0 V, IC = 1.0 mA*
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 100 mA, IB = 10 mA*
Base to Saturation Voltage
VBE(sat)
0.86
1.0
V
IC = 100 mA, IB = 10 mA*
Base Emitter Voltage
VBE
0.55
0.62
0.65
V
VCE = 6.0 V, IC = 1.0 mA*
Gain Bandwidth Product
fT
250
MHz
VCE = 6.0 V, IE = –10 mA
Output Capacitance
Cob
3.0
pF
VCB = 6.0 V, IE = 0, f = 1.0 MHz
* Pulsed: PW
≤ 350
µs, Duty Cycle ≤ 2 %
hFE Classification
Marking
L4
L5
L6
L7
hFE
90 to 180
135 to 270
200 to 400
300 to 600


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