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FDZ375P Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDZ375P Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C -12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.3 -0.5 -1.2 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C 2 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -2.0 A 65 78 m Ω VGS = -2.5 V, ID = -1.5A 77 92 VGS = -1.8 V, ID = -1.0 A 92 112 VGS = -1.5 V, ID = -1.0 A 112 150 VGS = -4.5 V, ID = -2.0 A, TJ =125°C 98 143 gFS Forward Transconductance VDD = -5 V, ID = -3.3 A 11 S Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 650 865 pF Coss Output Capacitance 110 145 pF Crss Reverse Transfer Capacitance 95 150 pF td(on) Turn-On Delay Time VDD = -10 V, ID = -3.3 A, VGS = -4.5 V, RGEN = 6 Ω 5.3 11 ns tr Rise Time 8.2 15 ns td(off) Turn-Off Delay Time 138 221 ns tf Fall Time 84 124 ns Qg Total Gate Charge VGS = -4.5 V, VDD = -10 V, ID = -3.3 A 11 15 nC Qgs Gate to Source Charge 0.8 nC Qgd Gate to Drain “Miller” Charge 3 nC IS Maximum Continuous Drain-Source Diode Forward Current -1.1 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V trr Reverse Recovery Time IF = -3.3 A, di/dt = 100 A/µs 68 109 ns Qrr Reverse Recovery Charge 43 69 nC Notes: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. a. 75 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. |
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