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DS1609 Datasheet(PDF) 1 Page - Dallas Semiconductor |
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DS1609 Datasheet(HTML) 1 Page - Dallas Semiconductor |
1 / 7 page DS1609 Dual Port RAM DS1609 020499 1/7 FEATURES • Totally asynchronous 256–byte dual port memory • Multiplexed address and data bus keeps pin count low • Dual port memory cell allows random access with minimum arbitration • EachporthasstandardindependentRAMcontrolsig- nals • Fast access time • Low power CMOS design • 24–pin DIP or 24–pin SOIC surface mount package • Both CMOS and TTL compatible • Operating temperature of –40°C to +85°C • Standby current of 100 nA @ 25°C makes the device ideal for battery backup or battery operate applica- tions. PIN ASSIGNMENT DS1609S 24–PIN SOIC (300 MIL) VCC OEB CEB WEB AD0B AD1B AD2B AD3B AD4B AD5B AD6B AD7B AD7A AD6A AD5A AD4A AD3A AD2A AD1A AD0A WEA CEA OEA GND PORT A DS1609 24–PIN DIP (600 MIL) PORT A PORT B VCC OEB CEB WEB AD0B AD1B AD2B AD3B AD4B AD5B AD6B AD7B AD7A AD6A AD5A AD4A AD3A AD2A AD1A AD0A WEA CEA OEA GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 See Mech. Drawings Section See Mech. Drawings Section PORT B PIN DESCRIPTION AD0–AD7 – Port address/data CE – Port enable WE – Write enable OE – Output enable VCC – +5 volt supply GND – Ground DESCRIPTION The DS1609 is a random access 256–byte dual port memory designed to connect two asyncronous ad- dress/data buses together with a common memory ele- ment. Both ports have unrestricted access to all 256 bytes of memory, and with modest system disci- pline no arbitration is required. Each port is controlled by three control signals: output enable, write enable, and port enable. The device is packaged in plastic 24–pin DIP and 24–pin SOIC. Output enable access time of 50 ns is available when operating at 5 volts. |
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