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DS1315EN-5 Datasheet(PDF) 11 Page - Dallas Semiconductor |
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DS1315EN-5 Datasheet(HTML) 11 Page - Dallas Semiconductor |
11 / 21 page DS1315 11 of 21 DC POWER DOWN ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC < 2.97V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CEO Output Voltage VCEO VCCI or VBAT1,2 -0.2 V 8 VBAT1 OR VBAT2 Battery Current IBAT 0.3 µA 6 Battery Backup Current @ VCCO = VBAT-0.2 ICCO2 10 µA 9 AC ELECTRICAL OPERATING CHARACTERISTICS ROM/RAM = GND (0°C to 70°C; VCC = 3.3 ± 10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Read Cycle Time tRC 120 ns CEI Access Time tCO 100 ns OE Access Time tOE 100 ns CEI to Output Low Z tCOE 5 ns OE to Output Low Z tOEE 5 ns CEI to Output High Z tOD 40 ns OE to Output High Z tODO 40 ns Read Recovery tRR 20 ns Write Cycle tWC 120 ns Write Pulse Width tWP 100 ns Write Recovery tWR 20 ns 4 Data Setup tDS 45 ns 5 Data Hold Time tDH 0 ns 5 CEI Pulse Width tCW 100 ns OE Pulse Width tOW 100 ns RST Pulse Width tRST 120 ns |
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