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STB24NM60N Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STB24NM60N
Description  N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB24NM60N Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB24NM60N
4/15
Doc ID 010008 Rev 1
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8 A
0.168
0.19
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1400
44
7.4
-
pF
pF
pF
Coss eq.
(1)
1.
Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
190
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 17 A,
VGS = 10 V
(see Figure 15)
-
46
7
23
-
nC
nC
nC


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