DS1230Y/AB

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DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as

32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry

lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static

RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the

pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices

in the Low Profile Module package are specifically designed for surface-mount applications. There is no

limit on the number of write cycles that can be executed and no additional support circuitry is required for

microprocessor interfacing.

READ MODE

WRITE MODE

WE

DATA RETENTION MODE

automatically write protect themselves, all inputs become “don’t care,” and all outputs become high-

DS1230Y.

FRESHNESS SEAL

Each DS1230 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,

energy source is enabled for battery back-up operation.