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DS1220AD-200-IND Datasheet(PDF) 4 Page - Dallas Semiconductor |
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DS1220AD-200-IND Datasheet(HTML) 4 Page - Dallas Semiconductor |
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4 / 8 page  DS1220Y 4 of 8 AC ELECTRICAL CHARACTERISTICS (TA : See Note 10; VCC =5.0V ± 10%) DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 PARAMETER SYM MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTE Read Cycle Time tRC 100 120 150 200 ns Access Time tACC 100 120 150 200 ns OE to Output Valid tOE 50 60 70 100 ns CE to Output Valid tCO 100 120 150 200 ns OE or CE to Output Active tCOE 55 5 5 ns 5 Output High Z from Deslection tOD 35 35 35 35 ns 5 Output Hold from Address Change tOH 55 5 5 ns Write Cycle Time tWC 100 120 150 200 ns Write Pulse Width tWP 75 90 100 150 ns 3 Address Setup Time tAW 00 0 0 ns Write Recovery Time tWR1 tWR2 0 10 0 10 0 10 0 10 ns ns 12 13 Output High Z from WE tODW 35 35 35 35 ns 5 Output Active from WE tOEW 55 5 5 ns 5 Data Setup Time tDS 40 50 60 80 ns 4 Data Hold Time tDH1 tDH2 0 10 0 10 0 10 0 10 ns ns 12 13 |
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