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DS1075M-100 Datasheet(PDF) 8 Page - Dallas Semiconductor |
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DS1075M-100 Datasheet(HTML) 8 Page - Dallas Semiconductor |
8 / 18 page DS1075 8 of 18 Figure 7 Depending on the relative timing of the SELX signal and the internal clock, there may be up to one full cycle of tI on the output after the falling edge of SELX . Then, the “low” time (tLOW) between output pulses will be dependent on the relative timing between tI and tE. The time interval between the falling edge of SELX and the first rising edge of the externally derived clock is tSIE. Approximate maximum and minimum values of these parameters are: tLOW (min) = tI/2 tLOW (max) = tI/2 + tE tSIE (min) = tI/2 tSIE (max) = 3 tI/2 + tE NOTE: In each case there will be a small additional delay due to internal propagation delays. FROM EXTERNAL TO INTERNAL CLOCK This is accomplished by a low to high transition on the SELX pin. In this case the switch is level triggered, to allow for the possibility of a clock signal not being present at OSCIN. Note therefore, that if a constant high-level signal is applied to OSCIN it will not be possible to switch over to the internal reference. (Level triggering was not employed for the switch from internal to external reference as this approach is slower and the internal clock may be running at a much higher frequency than the maximum allowed external clock rate). When SELX is high and a low level is sensed on EXTCLK, OUT0 will be held low until a falling edge occurs on INTCLK, then the next rising edge of INTCLK will be routed through to OUT0. Figure 8 Depending on the relative timing of the SELX signal and the external clock, there may be up to one full tE high period on the output after the rising edge of SELX . Then, the “low” time (tLOW) between output pulses will be dependent on the relative timing between tI and tE. The time interval between the falling |
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