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DS1135 Datasheet(PDF) 5 Page - Dallas Semiconductor

Part No. DS1135
Description  3-in-1 High-Speed Silicon Delay Line
Download  6 Pages
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Maker  DALLAS [Dallas Semiconductor]
Homepage  http://www.dalsemi.com
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DS1135 Datasheet(HTML) 5 Page - Dallas Semiconductor

   
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DS1135
5 of 6
TEST CONDITIONS
Ambient Temperature: 25
°C ±=3°C
Supply Voltage (VCC ): 5.0V
±=0.1V
Input Pulse:
High: 3.0V
±=0.1V
Low: 0.0V
±=0.1V
Source Impedance: 50
Ω=Max.
Rise and Fall Time: 3.0 ns Max. - Measured between 0.6V and 2.4V.
Pulse Width: 500 ns
Pulse Period: 1
µs
Output Load Capacitance: 15 pF
Output: Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
NOTE:
The above conditions are for test only and do not restrict the devices under other data sheet conditions.
TIMING DIAGRAM
NOTES:
1. All voltages are referenced to ground.
2. Pulse width and duty cycle specifications may be exceeded, however, accuracy will be application
sensitive with respect to decoupling, layout, etc.
3. Power-up time is the time from the application of power to the time stable delays are being produced
at the output.
tFALL
80%
tRISE
20%
IN
OUT
1.5V
1.5V
tWI
tWI
PERIOD
1.5V
1.5V
1.5V
tPLH
tPHL
tOF
tOR


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