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2SC3447 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC3447 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3447 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=: 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.6A ; VCE=5V 15 50 hFE-2 DC current gain IC=3A ; VCE=5V 8 fT Transition frequency IC=0.6A ; VCE=10V 18 MHz COB Output capacitance IE=0;f=1MHz ; VCB=10V 80 pF Switching times ton Turn-on time 0.5 µs tstg Storage time 3.0 µs tf Fall time VCC=200V; IC=4A IB1=0.8A;IB2=-1.6A; RL=50B 0.3 µs hFE-1 classifications L M N 15-30 20-40 30-50 |
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