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2SA812 Datasheet(PDF) 1 Page - NEC

Part No. 2SA812
Description  AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SA812 Datasheet(HTML) 1 Page - NEC

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SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1984
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) )
• High Voltage: VCEO = −50 V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
−60
V
Collector to Emitter Voltage
VCEO
−50
V
Emitter to Base Voltage
VEBO
−5.0
V
Collector Current (DC)
IC
−100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
−0.1
µA
VCB =
−60 V, IE = 0 A
Emitter Cutoff Current
IEBO
−0.1
µA
VEB =
−5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE =
−6.0 V, IC = −1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
−0.18
−0.3
V
IC =
−100 mA, IB = −10 mA
Base to Emitter Voltage
VBE
−0.58
−0.62
−0.68
V
VCE = 6.0 V, IC =
−1.0 mA
Gain Bandwidth Product
fT
180
MHz
VCE =
−6.0 V, IE = 10 mA
Output Capacitance
Cob
4.5
pF
VCE =
−10 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
M4
M5
M6
M7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING
(Unit: mm)
2.8 ±0.2
1.5 TYP.
0.65
+0.1
–0.15
Marking
1. Emitter
2. Base
3. Collector
1
2
3


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