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FEP30JP Datasheet(PDF) 1 Page - Vishay Siliconix |
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FEP30JP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 88597 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Apr-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Dual Common Cathode Ultrafast Rectifier FEP30AP thru FEP30JP Vishay General Semiconductor FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 50 V to 600 V IFSM 300 A trr 35 ns, 50 ns VF 0.95 V, 1.3 V, 1.5 V TJ max. 150 °C PIN 1 PIN 3 CASE PIN 2 TO-247AD (TO-3P) 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Operating storage and temperature range TJ, TSTG - 55 to + 150 °C/W |
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