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UTT80N75 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT80N75 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT80N75 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-881.a ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±25 V Drain Current Continuous ID 80 A Pulsed IDM 320 A Avalanche Energy Single Pulsed EAS 330 mJ Power Dissipation PD 167 W Junction Temperature TJ -50~+150 °C Storage Temperature Range TSTG -50~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.75 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 75 V Drain-Source Leakage Current IDSS VDS=75V, VGS=0V 10 µA Gate-Source Leakage Current Forward IGSS VGS=+25V, VDS=0V +100 nA Reverse VGS=-25V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A 10 12 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 3700 pF Output Capacitance COSS 730 pF Reverse Transfer Capacitance CRSS 240 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=60V, ID=40A, IG=3.33mA 117 nC Gate to Source Charge QGS 27 nC Gate to Drain Charge QGD 47 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=1.0A, RG=4.6Ω, VGS=10V 25 ns Rise Time tR 25 ns Turn-OFF Delay Time tD(OFF) 66 ns Fall-Time tF 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 80 A Maximum Body-Diode Pulsed Current ISM 320 A Drain-Source Diode Forward Voltage VSD IS=80A, VGS=0V 1.5 V Body Diode Reverse Recovery Time tRR ns |
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