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UTT36P03 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. UTT36P03
Description  -30V, -36A P-CHANNEL POWER MOSFET
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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UTT36P03 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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UTT36P03
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-775.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
-36
A
Pulsed
IDM
-144
A
Avalanche Current
IAR
-36
A
Avalanche Energy
Single Pulsed
EAS
36
mJ
Power Dissipation
PD
1.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55+~150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
2. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. TJ=25°C, VDD=-25V, L=0.1mH, RG=25Ω, IAS=-36A.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V
-1
μ
A
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=-250µA
-1
-3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-36A
38
mΩ
VGS=-4.5V, ID=-10A
58
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1MHz
3200
pF
Output Capacitance
COSS
350
pF
Reverse Transfer Capacitance
CRSS
205
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-10V, VDD=-25V, ID=-36A
17
nC
Gate to Source Charge
QGS
5
nC
Gate to Drain Charge
QGD
3
nC
Turn-ON Delay Time
tD(ON)
VDD=-25V, ID=-36A
RG=25Ω, VGS=-10V
6
ns
Rise Time
tR
16
ns
Turn-OFF Delay Time
tD(OFF)
26
ns
Fall-Time
tF
10
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-36
A
Maximum Body-Diode Pulsed Current
ISM
-144
A
Drain-Source Diode Forward Voltage
VSD
IS=-36A
-1.2
V


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