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DMA50201 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # DMA50201
Description  Silicon PNP epitaxial planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

DMA50201 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Ver. DED
Publication date: December 2013
1
DMA50201
Silicon PNP epitaxial planar type
For general amplification
DMA20201 in SMini5 type package
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: A5
Basic Part Number
Dual DSA2001 (Common Base)
Packaging
DMA502010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Tr1
Tr2
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
mA
Overall
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°
C
Operating ambient temperature
Topr
–40 to +85
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –10 V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –2 mA
210
460
hFE ratio *1
hFE
(Small/Large)
VCE = –10 V, IC = –2 mA
0.50
0.99
Collector-emitter saturation voltage
VCE(sat) IC = –100 mA, IB = –10 mA
– 0.2
– 0.5
V
Transition frequency
fT
VCE = –10 V, IC = –2 mA
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
2
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Unit: mm
1: Emitter (Tr1)
2: Base (Common)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Panasonic
SMini5-F3-B
JEITA
SC-113CB
Code
SOT-353
(C2)
4
Tr1Tr2
(C1)
5
1
(E1)
3
(E2)
2
(B)


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