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100N02 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. 100N02
Description  100A, 15V N-CHANNEL POWER TRENCH MOSFET
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

100N02 Datasheet(HTML) 2 Page - Unisonic Technologies

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100N02
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-860.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
15
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Continuous
ID
100
A
Pulsed
IDM
400
A
Avalanche Energy
Single Pulsed
EAS
12
mJ
Power Dissipation
PD
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
2.3
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
15
V
Drain-Source Leakage Current
IDSS
VDS=15V
1
μA
Gate-Source Leakage Current
Forward
IGSS
VGS=+8V
±100 nA
Reverse
VGS=-8V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
0.5
1.2
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=55A
12
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1.0MHz
3565
pF
Output Capacitance
COSS
1310
pF
Reverse Transfer Capacitance
CRSS
395
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=12V, ID=0.3A,
IG=100µA
46
60
nC
Gate to Source Charge
QGS
6.9
nC
Gate to Drain Charge
QGD
9.8
nC
Turn-ON Delay Time
tD(ON)
VDD=10V, ID=0.16A, RG=25Ω,
VGS=0~10V
9
ns
Rise Time
tR
106
ns
Turn-OFF Delay Time
tD(OFF)
53
ns
Fall-Time
tF
41
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=55A
1.3
V


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