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IRF3710 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF3710 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Typical capacitance vs. Drain-to-Source voltage Drain-to-Source voltage , VDS (volts) Source-to-drain voltage, VSD (volts) Fig.8 Maximum safe operating area Drain-to-Source voltage, VDS (volts) Case temperature, T (°C) C Fig.7 Typical gate charge vs. gate-to-source voltage Total gate charge , QG (nC) Fig.6 Typical source-drain diode forward voltage Fig.9 Maximum drain current vs. Case temperature 8 20 100000 10000 1000 100 0 0 20 40 60 80 12 4 0 10 1 1 10 50 40 30 20 10 0 25 50 75 100 125 150 2 0 100 16 100 1000 0.1 1 10 100 1000 www.nellsemi.com Page 4 of 7 IRF3710 Series 100 Crss Coss Ciss C = ( ) iss C +C C = shorted gs gd ds C = C rss gd C = C +C oss ds gd V = 0V, GS f =1MHZ V = 80V DS V = 50V DS V = 20V DS 5 7 10 12 l = 28A D 2 0.0 0.5 1 1.5 Operation in This Area is Limited by RDS(ON) 100µs 1ms 10ms Note: 1. T 2. T = 25°C C = 175°C J 3. Single Pulse 175 60 T =25°C J T =175°C J V = 0V GS |
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Similar Description - IRF3710 |
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