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IRF3205 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part No. IRF3205
Description  N-Channel Power MOSFET
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF3205 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
UNIT
Min.
0.75
0.50
THERMAL RESISTANCE
PARAMETER
Thermal resistance, case to heatsink
Thermal resistance, junction to case
SYMBOL
Rth(j-c)
Rth(c-s)
Typ.
Max.
ºC/W
62
IRF3205 Series
Thermal resistance, junction to ambient
Rth(j-a)
UNIT
V
ns
μA
pF
nC
65
Max.
44
250
55
8.0
-100
100
0.057
3240
210
14
100
50
780
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
V
= 0V, I = 250µA
GS
D
TEST CONDITIONS
I = 1mA, referenced to 25°C
D
V
=55V, V
=0V
DS
GS
T = 25°C
C
Fall time
Gate to source reverse leakage current
Input capacitance
Total gate charge
Output capacitance
PARAMETER
Rise time
Gate to source forward leakage current
Turn-on delay time
Reverse transfer capacitance
Breakdown voltage temperature coefficient
Drain to source breakdown voltage
Turn-off delay time
SYMBOL
CISS
V
/
(BR)DSS
TJ
V(BR)DSS
IGSS
QG
tr
tf
QGS
35
Gate to source charge
V
= 44V, V
= 10V, I = 62A
DS
GS
D
Drain to source leakage current
IDSS
COSS
CRSS
td(ON)
td(OFF)
V/ºC
S
nA
T =150°C
C
Typ.
Min.
10
25
150
V
= 28V,
DD
(Note 1)
I = 62A,R = 4.5Ω,
D
G
V
= 10V
GS
V
= 25V, V
= 0V, f =1MHz
DS
GS
V
= -20V, V
= 0V
GS
DS
V
= 20V, V
= 0V
GS
DS
V
=25V, I =62A
DS
D
Forward transconductance
Static drain to source on-state resistance
RDS(ON)
gfS
V
= 10V, l = 62A (Note 1)
GS
D
Gate to drain charge (Miller charge)
QGD
55
V
=44V, V
=0V
DS
GS
2
V
4
V
=V
, I =250μA
GS
DS
D
Gate threshold voltage
VGS(TH)
nH
7.5
1.5
Internal source inductance
LS
Internal drain inductance
LD
Between lead, 6mm from
package and center of die
Single pulse avalanche energy(Note 2)
EAS
1050
mJ
270
l
= 62A, L= 138μH
AS
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)
C
UNIT
Max.
TEST CONDITIONS
PARAMETER
SYMBOL
Typ.
Min.
V
I
= 62A, V
= 0V
SD
GS
Diode forward voltage
VSD
1.3
Integral reverse P-N junction
diode in the MOSFET
Continuous source to drain current
Is(IsD)
110
D (Drain)
G
(Gate)
S (Source)
A
Pulsed source current
ISM
390
I
= 62A, V
= 0V,
SD
GS
dI /dt = 100A/µs
F
Reverse recovery time
trr
ns
70
nC
Reverse recovery charge
Qrr
145
Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2%
.
2. L=138μH,
≤ 175°
I
≤ 62A, R =25Ω, T
C
AS
G
J
tON
Forward turn-on time
110
220
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
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